Abstract
In this work, NBTI characteristics of pMOSFET with high-k/metal gate stacks are systematic investigated and the degradation mechanisms are analyzed. The threshold voltage shift with stress time obeys power-law, but the power exponent is dependent on stress voltage, and it ranges from 0.26 to 0.16. The activation energy (Ea) under -1.4V stress is extracted as 0.24eV. Trap charging in the high-k layer dominates the NBTI degradation rather than interface state generation. The lifetime prediction prefers to power law model.
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