Abstract
The variation of backside reflectance modulation effects on metal line samples at different electrical bias and silicon backside thicknesses is investigated. Negative reflected intensity modulations are observed and are one to two orders of magnitude larger than the values from published results. It was found that the negative reflected intensity modulation with electrical bias depends on the temperature variation of the absorption coefficient while observed positive reflectance intensity modulation is due to temperature variation of the reflectance.
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