Abstract
Abstract Achieving high transmission of light through a highly conductive structure implemented on a semiconductor remains a challenge in optoelectronics as the transmission is inevitably deteriorated by absorption and Fresnel reflection. There have been numerous efforts to design structures with near-unity transmission, yet they are typically constrained by a trade-off between conductivity and optical transmission. To address this problem, we propose and demonstrate a transmission mechanism enabled by a monolithic GaSb subwavelength grating integrated with Au stripes (metalMHCG). Near-unity transmission of polarized light is achieved by inducing low-quality factor resonance in the air gaps between the semiconductor grating stripes, which eliminates light absorption and reflection by the metal. Our numerical simulation shows 97% transmission of transverse magnetic polarized light and sheet resistance of 2.2 ΩSq−1. The metalMHCG structure was realized via multiple nanopatterning and dry etching, with the largest transmission yet reported of ∼90% at a wavelength of 4.5 µm and above 75% transmission in the wavelength range from 4 to 10 µm and sheet resistance at the level of 26 ΩSq−1. High optical transmission is readily achievable using any high refractive index materials employed in optoelectronics. The design of the metalMHCG is applicable in a wide electromagnetic spectrum from near ultraviolet to infrared.
Highlights
Conductive and transparent layers implemented at the semiconductor surface are in high demand for interactive electronics [1,2,3,4], concentrator photovoltaics [5,6,7,8], light-emitting diodes (LEDs) [9], and surfaceemitting lasers (SELs) [10, 11]
We consider a single period of the grating with periodic boundary conditions, which elongate the grating to infinity in the lateral direction
This paper presents the first experimental demonstration of a monolithic high contrast grating integrated with metal stripes, enabling maximum 90% transmission of polarized light
Summary
Conductive and transparent layers implemented at the semiconductor surface are in high demand for interactive electronics [1,2,3,4], concentrator photovoltaics [5,6,7,8], light-emitting diodes (LEDs) [9], and surfaceemitting lasers (SELs) [10, 11]. Abstract: Achieving high transmission of light through a highly conductive structure implemented on a semiconductor remains a challenge in optoelectronics as the transmission is inevitably deteriorated by absorption and Fresnel reflection. Near-unity transmission of polarized light is achieved by inducing low-quality factor resonance in the air gaps between the semiconductor grating stripes, which eliminates light absorption and reflection by the metal.
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