Abstract
〈1 1 1〉B and 〈1 0 0〉 oriented tellurium-doped GaSb single crystals have been grown by the vertical Bridgman technique, with and without a baffle in the melt. The axial and radial segregation has been investigated. Nearly diffusion controlled steady-state segregation was reached with a baffle submerged in the melt above the melt–solid interface. The experimental data has been compared with the theoretically calculated curves using a segregation coefficient of 0.37 and distribution coefficient of 3×10 −5 cm 2/s for Te in GaSb.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
