Abstract
Thin films of titanium/silicon/oxygen (Ti:Si:O) deposited by sputtering were evaluated as thin film resistors and the resulting resistance and temperature coefficient of resistance (TCR) was studied. The films were deposited in an Argon atmosphere at room temperature with 1% oxygen and their electrical properties evaluated before and after forming gas (5% H2: 95% N2) annealing at 325 and 450 °C for 1 h. The physical structure was characterized by x-ray diffraction (XRD), elemental composition and depth profile by Rutherford backscattering (RBS), and film composition by x-ray photoelectron spectroscopy (XPS). Carrier mobility, type and concentration were evaluated by Hall effect measurements. Thin films with a Ti:Si ratio of 1.6 exhibited a near zero TCR (−405 ppm °C−1) and sheet resistance (Rsh) at 25 °C of 1 kOhm sq−1.
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