Near-Surface Electronic Contribution to Semiconductor Elasticity

Abstract

Micro- and nanoelectromechanical systems (MEMS and NEMS) have clear advantages for space-based sensing and timing applications, but their operation in the face of strong radiation is not well understood. This work describes a mechanism whereby space radiation can impact a semiconductor's elasticity, and hence an electromechanical device's operation. It is shown that radiation-induced changes in carrier concentration at the surface result in long-term modification of the material's mechanical constants---an important source of error for MEMS or NEMS resonators operating in high-radiation environments.