Abstract
A post-growth Li-rich vapor transport equilibration (VTE) technique was used to prepare near-stoichiometric Er3+ doped LiNbO3 thin films. Er3+ fluorescence property, defect feature and Li2O content of the films were characterized. The results show that the visible and near-infrared fluorescence intensity increases remarkably by ∼10 times the VTE time is increased from 0 to 5 h. The enhancement can be explained from viewpoint of Nb4+ defects concentration. X-ray photoelectron spectrometer study confirms presence of antisite NbLi4+ in the films and NbLi4+ is major defect. Its concentration decreases with increased VTE time. The Li2O content in the films is evaluated to be 48.8–49.7 mol% from the birefringence results. It increases with a rise in VTE time, matching with the characteristic of antisite defects. As defects concentration decreases, the non-radiative transition weakens , which is beneficial to improve fluorescence properties.
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