Abstract
We report on the current-voltage (I–V) characteristics of a metal/ultrathin GaS (thickness<100 Å)/n+-GaAs (carrier concentration=2×1018 cm-3) quasi-metal-insulator-semiconductor (QMIS) structure. The GaS was grown by molecular beam epitaxy (MBE) employing the precursor tertiarybutyl-galliumsulfide-cubane ([(t-Bu)GaS]4). The I–V characteristics of the QMIS structure depend on the work function of various metals (Au, Al, Ti). We discovered that a QMIS structure leads to a reduction of Schottky-barrier height itself. Furthermore, we demonstrated near-ohmic contact (contact resistivity=3.7×10-3 Ωcm2) for a Ti/97-Å-thick GaS/n+-GaAs QMIS structure. From the relationship between the semiconductor barrier height and the metal work function, we determined that Fermi level pinning was almost eliminated by GaS passivation.
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