Abstract
We report on the fabrication of planar waveguides in gallium nitride by 5 MeV carbon ion implantation with different fluences at room temperature. The waveguides are characterized by prism coupling, Rutherford backscattering/channeling, and high-resolution X-ray diffraction analysis. A positive change in ordinary refractive index is confirmed in the waveguide region at a near-infrared waveband. The thermal stability of the ion-implanted GaN waveguides is investigated by annealing the samples at different temperatures.
Published Version
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