Abstract
Understanding the defect physics of ZnO is crucial in controlling its properties for various applications. We report the observation of an interesting 1.64 eV near-infrared (NIR) photoluminescence from ZnO and its evolution with annealing temperature. Based on a recent calculation on the transition levels of native point defects of ZnO [A. Janotti and C. G. Van de Walle, Phys. Rev. B 76, 165202 (2007)], the NIR emission can be successfully explained by the donor-acceptor transition between VO and VZn and/or the radiative recombination of shallowly trapped electrons with deeply trapped holes at Oi.
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