Near-infrared diode laser hydrogen fluoride monitor for dielectric etch

Abstract

A hydrogen fluoride (HF) monitor, using a tunable diode laser, is designed and used to detect the etch endpoints for dielectric film etching in a commercial plasma reactor. The reactor plasma contains HF, a reaction product of feedstock gas CF4 and the hydrogen-containing films (photoresist, SiOCH) on the substrate. A near-infrared diode laser is used to scan the P(3) transition in the first overtone of HF near 1.31μm to monitor changes in the level of HF concentration in the plasma. Using 200ms averaging and a signal modulation technique, we estimate a minimum detectable HF absorbance of 6×10−5 in the etch plasma, corresponding to an HF partial pressure of 0.03mTorr. The sensor could indicate, in situ, the SiOCH over tetraethoxysilane oxide (TEOS) trench endpoint, which was not readily discerned by optical emission. These measurements demonstrate the feasibility of a real-time diode laser-based sensor for etch endpoint monitoring and a potential for process control.