Abstract
We have identified individual threading dislocations on relaxed, compositionally graded GexSi1−x structures through simultaneous imaging of topography and photoresponse. The threading dislocations show shallow depressions in surface morphology and a 5%–10% reduction in photoresponse compared with the defect-free regions. The average spatial extent of the reduced photoresponse is (0.66±0.16) μm, which is larger than the associated morphology. This study further demonstrates the application of near-field scanning optical microscopy to characterization of electrically active defects. The spatial resolution is ten times higher than conventional optical techniques.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
