Near edge X-ray absorption fine structure spectroscopy of chemically modified porous silicon

Abstract

The organic modification of porous silicon (PSi) has been studied by near edge X-ray absorption fine structures (NEXAFS) spectroscopy. We report the NEXAFS studies of a series of the PSi films modified by organic monolayers, covalently attached to the surface via SiC and SiOC bonds. The C, O, and Si K-edge, and Si L 3,2-edge NEXAFS of these PSi films, measured in both the surface sensitive total electron yield (TEY) and the interface and bulk sensitive fluorescence yield (FLY) show that the surface SiC and SiOC bonds are indeed present and that the remaining of the capping molecule remains intact. The results are reported and their implications discussed.