Abstract
The organic modification of porous silicon (PSi) has been studied by near edge X-ray absorption fine structures (NEXAFS) spectroscopy. We report the NEXAFS studies of a series of the PSi films modified by organic monolayers, covalently attached to the surface via SiC and SiOC bonds. The C, O, and Si K-edge, and Si L 3,2-edge NEXAFS of these PSi films, measured in both the surface sensitive total electron yield (TEY) and the interface and bulk sensitive fluorescence yield (FLY) show that the surface SiC and SiOC bonds are indeed present and that the remaining of the capping molecule remains intact. The results are reported and their implications discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Electron Spectroscopy and Related Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
