Abstract
We present results of pressure-dependent photoluminescence (PL) studies of single-crystal AlxGa1−xN epitaxial films grown on sapphire substrates by metalorganic chemical vapor deposition. PL measurements were performed under hydrostatic pressure using the diamond-anvil-cell technique. PL spectra taken from the AlxGa1−xN epitaxial films are dominated by strong near-band-edge luminescence emissions. The emission lines were found to shift linearly towards higher energy with increasing pressure. By examining the pressure dependence of the spectral features, the pressure coefficients for the PL emissions associated with the direct Γ band gap of AlxGa1−xN were determined. Our results yield a pressure coefficient of 4.0×10−3 eV/kbar for Al0.05Ga0.95N and 3.6×10−3 eV/kbar for Al0.35Ga0.65N.
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