Abstract
We have measured the pressure-dependent photoluminescence (PL) spectra of hBN flakes at low temperature by using diamond anvil cell (DAC) device. It is found that the absolute values of pressure coefficients of discrete PL emission lines are all below 15 meV/GPa which are much less than 36 meV/GPa, the pressure-induced red-shift rate of hBN bandgap. These PL emission lines are originated from the atom-like localized defect levels confined within the band gap of hBN flakes. The experimental results of pressure-dependent PL emission lines present three different types of pressure response, corresponding to red-shift (negative pressure coefficient) and blue-shift (positive pressure coefficient), or even a sign change from negative to positive.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
