Abstract
Piezoelectric photothermal spectroscopy (PPTS) measurements were conducted on p- and n-type silicon, <100> orientation samples. We showed that a PPTS signal bearing a lower energy edge around 1.048 eV at room temperature was due to band-to-band transitions with optical mode phonon (0.064 eV) absorption. Similarly, a signal bearing an edge above 1.19 eV, observed at temperature less than 200 K was due to band-to-band transitions involving the phonon emission. The two signals were observed in both p- and n-type samples. These results indicated that very low absorption coefficient in indirect semiconductor can be effectively observed by using the proposed PPTS technique. An additional signal bearing a broad peak around 1.18±0.01 eV at room temperature was also observed for both types of samples. We proposed that the broad-peak signal was due to surface states.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
