Abstract
The effect of surface states on the piezoelectric photothermal (PPT) spectra of p- and n-type, <100> oriented, single crystal silicon was investigated. We showed that a PPT signal bearing a lower energy edge around 1.04 eV at room temperature was due to the bulk effect. This bulk signal was greatly affected by another signal bearing a broad peak around 1.18±0.01 eV. The broad peaked signal was found to be due to the surface states. The variation in amplitude and phase of the 1.18±0.01 eV signal revealed that the surface states were affected by the ambient illumination and low-temperature thermal annealing at 350 K. The results also indicated that a very low absorption coefficient in indirect semiconductors can be effectively observed by using the proposed PPTS technique.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.