Abstract
The effect of surface states on the piezoelectric photothermal (PPT) spectra of p- and n-type, <100> oriented, single crystal silicon was investigated. We showed that a PPT signal bearing a lower energy edge around 1.04 eV at room temperature was due to the bulk effect. This bulk signal was greatly affected by another signal bearing a broad peak around 1.18±0.01 eV. The broad peaked signal was found to be due to the surface states. The variation in amplitude and phase of the 1.18±0.01 eV signal revealed that the surface states were affected by the ambient illumination and low-temperature thermal annealing at 350 K. The results also indicated that a very low absorption coefficient in indirect semiconductors can be effectively observed by using the proposed PPTS technique.
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