NDR free negative capacitance CGAAFET at 2nm technology node for low power and high-speed applications

Abstract

This paper presents the detailed analysis of n-channel Negative Capacitance Cylindrical Gate All Around Field Effect Transistor (NC-CGAAFET) of class Metal-Ferroelectric-Insulator Semiconductor (MFIS) at 2 nm technology node and its comparison with CGAAFET (Cylindrical Gate All Around Field Effect Transistor). NC-CGAAFET shows better performance in terms of ION, Drain Induced Barrier Lowering (DIBL), Subthreshold Swing (SS), and ION/IOFF when compared to CGAAFET. Further, NC-CGAAFET is analyzed at different values of ferroelectric layer thickness (TFE), along with different values of spacer dielectric constant (K), spacer length (LSP) and nanowire diameter (DNW) and found that SS goes below Boltzmann's limit (60 mV/dec) and further decreases with increasing TFE. Also observed that Negative-DIBL increases as TFE increases. In addition to this, the device is optimized for NDR (Negative Differential Resistance) free operation, to be applicable for both analog and digital applications, by varying TFE. The optimized NDR free NC-CGAAFET offers SS of 59.33 mV/dec, DIBL of 13.91 mV/V, and the ION/IOFF ratio of 3.28x higher than conventional CGAAFET by operating at low power supply (VDD ∼ 0.65V).