N-Doping Impact in Optimized Ge-Rich Materials Based Phase-Change Memory

G Navarro,E Palumbo,L Perniola,O Cueto,P Noe,M Coue,M Borghi,A Kiouseloglou,A Roule,F Fillot,R Annunziata,A Persico,S Blonkowski,P Zuliani,C Sabbione,N Bernier,V Sousa,N Castellani,J Kluge

doi:10.1109/imw.2016.7495284

N-Doping Impact in Optimized Ge-Rich Materials Based Phase-Change Memory

G Navarro, E Palumbo + Show 17 more

https://doi.org/10.1109/imw.2016.7495284

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Publication Date: May 1, 2016

Citations: 11

Affiliation: Université Grenoble Alpes, Grenoble Institute of Technology, CEA Grenoble, Atomic Energy and Alternative Energies Commission, STMicroelectronics (Italy), STMicroelectronics (France)

#High Temperature Data Retention #Change Memory + Show 8 more

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Abstract

In this paper we investigate the impact of N- doping in optimized Ge-rich Ge2Sb2Te5 materials on device programming and storing performance. We integrate these alloys in state-of-the-art Phase- Change Memory (PCM) cells and we analyze the efficiency of the SET operation in N-doped and undoped memory cells, comparing voltage based programming with current based programming. This aspect is extensively investigated through electrical characterization, physico-chemical analysis and electro-thermal simulations. The thermal stability of these devices is finally evaluated and high temperature data retention is granted enabling PCM for embedded applications.

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