Abstract
A 2 mu m rule DMOS/CMOS compatible IGBT (insulated-gate bipolar transistor) with high reverse blocking capability has been developed for multipoint differential line drivers. Remarkable improvement of the reverse blocking capability and large latch-up current are achieved due to the formation of the wide N-base, the heavily doped N-buffer, and the P-well around the P-base. The effect of the conductivity modulation, arising from the injected holes, is compared with the DMOSFET in series with a P- nu -N diode. >
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