Abstract
In this chapter, the basic structure and operating characteristics of the IGBT are first described. The analysis of forward and reverse blocking capability is then performed followed by discussion of the on-state characteristics of IGBTs with various collector structures. The IGBT structure is shown to behave like a P-i-N rectifier in the on-state producing a low on-state voltage drop even for structures designed to support large voltages. The switching behavior of the IGBT is then analyzed including discussion of lifetime control processes for optimization of the trade-off between on-state and switching losses. Various methods to suppress the parasitic thyristor within the IGBT structure are discussed in detail because this is essential to the design of functional devices. The analysis and design of trench-gate IGBT structures are also provided in this chapter.
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