Abstract
Thin films of CdSe grown by non-catalytic displacement plating (NCDP) are characterised electrochemically and photoelectrochemically in polysulphide electrolyte; using Cyclic Voltametry in dark and under intermittent illumination, band edges of NCDP-plated CdSe are located. A depletion width of 2 μm is calculated across the CdSe∥ S 2− S 2 2− interface. Charge-transfer mechanism across this junction is discussed. Electrochemical and photoelectrochemical stabilities of NCDP-plated CdSe electrode are studied. Efficiency and fill factor of as-fabricated photoelectrochemical (PEC) cell are found to be 1.02% and 0.34, respectively.
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