Abstract
Yttria-stabilized zirconia (YSZ) is used as an insulating barrier for the fabrication of niobium edge junctions. Using the ion beam assisted deposition technique, Nb/YSZ/Nb edge junctions with YSZ thin film of a few nanometers in thickness have been fabricated. The junctions are nonhysteretic with critical current densities up to 4 mA/μm2 and critical current normal resistance products of ∼1 mV.
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