Abstract
We have newly devised a magnetic field distribution variable-type facing target sputtering system. The magnetic field distribution between facing targets can be easily changed by moving a magnet without breaking the vacuum. This function can realize with one cathode about both low-damage-sputtering and high-rate-sputtering, and offer a newly thin film fabrication method. By changing the magnetic field distribution between facing targets, Niobium deposition rate has changed three or more times with the same sputtering conditions, such as RF applied electric power and Argon pressure.
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