Abstract
Nb-doped Bi 3.25La 0.75(Ti 1− x Nb x ) 3O 12 ceramics were prepared by a solid state reaction. A crystal structure with Bi-layered structured ferroelectrics is confirmed by a X-ray diffraction (XRD). With increasing Nb concentration, the Curie temperature decreased, and the dielectric constant peak broaden. The remanent polarization ( P r) increased at a small Nb doping of x=0.03–0.05. At temperature above 120 °C, the electrical conductivity decreased by Nb doping. For the high-valence Nb 5+ substitution for Ti 4+ in BLT ceramic, the effects of Nb doping on ferroelectric and electrical properties were investigated by the dielectric constant, ferroelectric P– E hysteresis loop and electrical conductivity.
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