Abstract
Charge-trapping characteristics of La2O3 with and without nitrogen incorporation were investigated based on Al/Al2O3/La2O3/SiO2/Si (MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with La2O3 as charge-trapping layer, the one with nitrided La2O3 showed a larger memory window (4.9 V at ±10-V sweeping voltage), higher program speed (4.9 V at 1-ms +14 V), and smaller charge loss (27% after 10 years), due to the nitrided La2O3 film exhibiting less crystallized structure and high trap density induced by nitrogen incorporation, and suppressed leakage by nitrogen passivation.
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