Native point defects in non-stoichiometric GaAs doped with beryllium

Abstract

Native point defects in non-stoichiometric GaAs layers doped with Be were observed. Ga vacancies were identified by positron annihilation. As Ga antisite defects were investigated by near infrared absorption and magnetic circular dichroism of absorption, respectively. We found the properties of the As Ga antisites very similar to that of As Ga in bulk GaAs, i.e. they exhibit the same MCDA spectra and quenching behavior. The concentration of native point defects was not influenced by the Be doping. Therefore, the thermal stability of non-stoichiometric GaAs : Be can not be explained with a different incorporation of native defects.