Abstract
The electronic properties of MBE-grown GaAs at temperatures well below 400°C are governed by its high concentration of native point defects. It is vital for device applications to understand and control the point defect concentrations in this non-stoichiometric III–V compound. In this paper, we present a detailed analysis of the changes of the point defect concentrations upon thermal annealing in both undoped and p-doped low-temperature-grown GaAs (LT-GaAs). The temperature-dependent concentration of residual arsenic antisites (AsGa) after annealing is shown. Also the annealing behavior of the gallium vacancies (VGa) is investigated. Their role in the As diffusion will be discussed. The thermal stabilization of AsGa will be demonstrated in LT-GaAs:Be for annealing temperatures as high as 700°C for 30min.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
