Abstract
We will review the current status of the native defect properties in II–VI compound semiconductors. Based on electron paramagnetic resonance, optically detected magnetic resonance, photoluminescence and positron annihilation spectroscopy the intrinsic defects and complexes of them in CdTe and ZnTe are identified. Quantitative estimates are given. We compare their magnetic resonance properties as well as energy level positions in the various II–VI compounds to show similar chemical trends for all major intrinsic defects.
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