Abstract
The continuous trend towards smaller geometries implies the analysis of both short- and narrow-channel effects. Although the narrow channels are of high interest in low-power/low-voltage applications, relatively few and rather contrasting results have, in the past, been reported (Kuo et al, 1995; Fung et al, 1998; Wang et al, 2000; Cristoloveanu and Li, 1995; Zhao and Ioannou, 1999). The narrow-channel effects depend on the isolation technology (MESA, LOCOS, STI), wafer origin (SIMOX, Unibond, etc.), device architecture (fullyor partially depleted MOSFETs) and film thickness. In this paper, we attempt to elucidate the narrow-channel effects in fully depleted, LOCOS isolated n-MOSFETs as well as their relationship with other key dimensional effects (short channels and ultra-thin films).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
