Abstract
The narrow-channel effects (NCE) and their impact on the floating body effects (FBEs) are investigated by various static and dynamic measurements in both LOCOS and STI isolated devices. It is found that FBEs are reduced in narrow channel devices for both isolation technologies. Two possible mechanisms are found to be consistent with our results: a carrier lifetime degradation on the sidewalls or an increase of the source/body junction leakage on the edges. Both mechanisms are discussed on the basis of our experimental results and on previous studies in bulk or SOI devices.
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