Abstract
Transport properties (dc electrical resistivity, threshold electric field, and narrow-band noise) are reported for nanoribbon specimens of NbSe3 with thicknesses as low as 18 nm. As the sample thickness decreases, the resistive anomalies characteristic of the charge density wave (CDW) state are suppressed and the threshold fields for nonlinear CDW conduction apparently diverge. Narrow-band noise measurements allow determination of the concentration of carriers condensed in the CDW state nc, reflective of the CDW order parameter Δ. Although the CDW transition temperatures are relatively independent of sample thickness, in the lower CDW state Δ decreases dramatically with decreasing sample thickness.
Highlights
Low dimensional charge density wave (CDW) materials have enjoyed a resurgence of research popularity driven largely by interest in two-dimensional materials in the ultrathin limit
The upper CDW resistive anomaly is suppressed by only ∼50% for the 18 nm sample
The significant difference in size sensitivity between the lower and upper CDW states has not been observed in earlier studies of NbSe3 nanowires produced by ultrasonic cleaving [16]
Summary
Supplementary material for this article is available online the terms of the Creative. As the sample the work, journal citation and DOI. Thickness decreases, the resistive anomalies characteristic of the charge density wave (CDW) state are suppressed and the threshold fields for nonlinear CDW conduction apparently diverge. Narrow-band noise measurements allow determination of the concentration of carriers condensed in the CDW state nc, reflective of the CDW order parameter Δ. The CDW transition temperatures are relatively independent of sample thickness, in the lower CDW state Δ decreases dramatically with decreasing sample thickness
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