Abstract
The present study offers two Al/Si multilayer-grating microstructures based on SiO2 substrate. The two microstructures exhibit narrowband absorption in infrared wavebands. Based on different positions of the grating ridge, the finite element method is used for simulation, and a single-band absorber and a dual-band absorber are obtained under TM polarization. Perfect absorption of 99.77% is achieved in single-band absorber. The dual-band absorbers also achieve efficient absorption of 95.44% and 96.26% at the points of 3712 nm and 6443 nm. The production tolerance of the absorber is also investigated and analyzed, and the two absorbers are found to have great application prospects. Narrowband absorbers are widely used in areas such as high sensitivity sensors.
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