Abstract
We report the first atmospheric-pressure narrow-stripe (<2 μm) selective MOVPE. The extremely large bandgap wavelength shift of 370 nm for a selectively grown InGaAsP/InGaAsP multiple quantum well (MQW) was obtained with a small mask width variation (0–30 μm). This shift was four times that obtained under growth at 75 Torr. High-quality MQWs with flat interfaces and a photoluminescence full-width-at-half-maximum of less than 40 meV (0.5 kW/cm 2) were obtained by optimizing growth conditions. We deduced that the essential flattening mechanism under these conditions is the formation of a (1 0 0) facet under step-flow growth mode. We fabricated 1.55 μm MQW Fabry-Perot laser diodes with a room temperature threshold current as low as 5 mA.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
