Abstract
Ten-layer InAs/In0.15Ga0.85As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 × 2,000 μm2) delivered total output power of up to 272.6 mW at 10 °C at 1.3 μm. Under pulsed operation, where the device heating is greatly minimized, the InAs QD laser (2 × 2,000 μm2) delivered extremely high output power (both facets) of up to 1.22 W at 20 °C, at high external differential quantum efficiency of 96%. Far field pattern measurement of the 2-μm RWG InAs QD lasers showed single lateral mode operation.
Highlights
High-performance GaAs-based quantum dot (QD) lasers are of great interest due to their potential applications in advanced optical fiber communication systems [1,2,3,4,5,6,7,8,9]
While we have previously demonstrated [14] low transparency current density and high temperature characteristic ten-layer InAs broad area QD lasers, this paper reports the characteristics of ten-layer narrow ridge width (2 lm) InAs QD lasers
Our results show that the ten-layer InAs QD lasers fabricated using pulsed anodic oxidation (PAO) were able to deliver comparable, and in some cases better performance with near ideal external differential efficiency of 96% and extremely high output power of 610 mW/facet under pulsed operation
Summary
High-performance GaAs-based quantum dot (QD) lasers are of great interest due to their potential applications in advanced optical fiber communication systems [1,2,3,4,5,6,7,8,9]. High power single mode operation has been achieved in InGaAsN/GaAs QW lasers, where high Fewer works have been reported on single mode operation in high performance In(Ga)As/GaAs QD lasers [12, 13].
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