Abstract
The angles of beam divergence perpendicular to the junction plane have been studied for low-threshold GaInAsP/InP double-heterostructure lasers with a thin active layer emitting at 1.31 μm. The narrowest beam divergence obtained was 23° for a laser diode with an active-layer thickness of 0.05 μm. At an active-layer thickness of 0.13 μm, the beam divergence was 40° with a threshold current density of 770 A/cm2.
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