Nanowire Growths, and Mechanisms of These Growths for Developing Novel Nanomaterials.

Abstract

Nanowire nanoelectronics depends largely on nanowire materials characteristics. The nanowires are grown by a number of different mechanisms. A comparative and comprehensive investigation of nanowires by these mechanisms has been carried out to address the nanowire characteristics best suited to nanoelectronics. The development and optimization of nanowire processing techniques for viable nanowire nanoelectronics have also been elucidated. The fundamentals of the growth mechanisms that lead to the best possible nanowires have been evaluated, as well. Among various mechanisms, the vapor-liquid-solid (VLS) mechanism is the oldest. It is most widely employed mechanism for nanowire growth. Challenges to the VLS nanowires have been discussed. Attributes of nanowires by the self-catalytic growth (SCG) have been explored. The details of the growth conditions of the SCG mechanism have been explained. Photoluminescence characteristics of nanowires by various mechanisms have been compared. This comparison sheds light on the relative strengths of these mechanisms. Control of growth directions, in situ arrays of nanowire self-organization, vertically aligned positioning, nanowire quality, nanowire contamination; seed/substrate mismatch interface states, etc. are the keys to nanowire applicability to nanoelectronics, which have been described. The fundamentals of various issues such as self-organization, growth criteria, Ostward ripening, Stranski-Krastanov growth mode, etc. have been articulated. Defects, dislocations, and stacking faults are very detrimental for nanotechnology. Relative strengths and weaknesses of various mechanisms based on nanowire defects, dislocations, and stacking faults have been elaborated.