Abstract
The self-catalytic growth (SCG) mechanism for the growths of one-dimensional and quasi-two-dimensional nanomaterials has been reviewed. This is a metal-catalyst-free mechanism. The basics of it have been presented. Nanowire growths by this mechanism by various catalyst-free means have been investigated. Strengths and weaknesses of it in mediating nanowire growths have been stated. The ability of this mechanism to mediate both nanowire and nanotube growths has been highlighted. The ability of it also to produce highly pure defect-free nanowires and even ternary and quaternary nanowires by this mechanism has been commended. Understanding self-catalytic nanowire growth taking into consideration factors such as edges, tips, hillocks and roughness of the nanoparticle surface and also grains, and grain boundaries formed prior to growths has been elucidated. The differences between the selective area epitaxy and the self-catalytic growth have been described. The novelty of the SCG mechanism has been discerned. The role of oxide in the growths by the SCG mechanism has been examined. Finally, the superiority of the SCG mechanism to other mechanism has been elaborated.
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