Abstract
In situ transmission electron microscopy and thermal desorption spectrometry have been employed to observe the evolution of vacancy-type extended defects and the corresponding helium state in helium implanted single crystal silicon during thermal ramp annealing. The structural evolution, starting with the formation of a platelike cluster of highly pressurized helium bubbles and ending in an empty nanovoid, is performed conserving the total volume of vacancy-type extended defects forming each cluster. Structural adjustments occur by surface diffusion inside each cluster following a migration and coalescence mechanism in presence of high pressure helium for $350\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}lTl570\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}.$ A conservative Ostwald ripening is observed for $570lTl700\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ in presence of helium desorption.
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