Abstract
The lattice mismatch strain-driven coherent three-dimensional InGaAs island self-assembled quantum dots (SAQDs) formed on GaAs (001) and buried in an appropriate optical cavity have been shown to be effective single photon sources at low temperature. However, SAQDs suffer from (1) structural and chemical inhomogeneity resulting in large variation in emission wavelengths and (2) being randomly positioned, virtually insurmountable obstacles for input-output communication in any systems architecture. In this paper, the authors exploit the engineered surface stress-directed atom migration approach to create single flat InGaAs/GaAs quantum dot (QD) on nanotemplated mesas in regular arrays with control on QD size, shape and physical location. Photoluminescence studies on this class of QDs show an exciton coherence time longer than 1 ps and radiative decay time ∼0.8 ns, which is comparable to the findings on SAQDs but has higher uniformity than SAQDs.
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Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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