Abstract
The application of porous silicon as a template for the fabrication of nanosized copper objects is reported. Three different types of nanostructures were formed by displacement deposition of copper on porous silicon from hydrofluoric acid-based solutions of copper sulphate: (1) copper nanoparticles, (2) quasi-continuous copper films, and (3) free porous copper membranes. Managing the parameters of porous silicon (pore sizes, porosity), deposition time, and wettability of the copper sulphate solution has allowed to achieve such variety of the copper structures. Elemental and structural analyses of the obtained structures are presented. Young modulus measurements of the porous copper membrane have been carried out and its modest activity in surface enhanced Raman spectroscopy is declared.
Highlights
Despite its long-standing discovery, porous silicon (PS) has been attracting a great attention as a breakthrough material with exceptional characteristics for microelectronics, integrated optoelectronics, microelectromechanical systems (MEMS), layer transfer technology, solar and fuel cells, biomedicine, etc. [1]
We have proposed to vary parameters of PS to fabricate by displacement technique copper NPs of controllable dimensions as well as thick, porous copper membrane
The maximum deposition time (180 s) was chosen because at that moment, hydrogen release almost stopped for both types of PS, i.e., the redox process was too weak for the valuable amount of copper deposition or finished
Summary
Despite its long-standing discovery, porous silicon (PS) has been attracting a great attention as a breakthrough material with exceptional characteristics for microelectronics, integrated optoelectronics, microelectromechanical systems (MEMS), layer transfer technology, solar and fuel cells, biomedicine, etc. [1]. Deep penetration of copper atoms into porous layer during immersion deposition results in the formation of a Cu/PS composite, providing several times of increasing copper film adhesion. This is another advantage of the immersion method because during evaporation or sputtering, depositing copper atoms are located at the entrances of pores [2]. All mentioned works on the immersion deposition of Cu on PS have applied simple aqueous solutions of copper salts accompanied by the formation of SiO2 under a copper deposit which stops the redox reaction and prevents the dissolution of porous template. We have proposed to vary parameters of PS to fabricate by displacement technique copper NPs of controllable dimensions as well as thick, porous copper membrane. Modest SERS activity of the copper porous membrane has been declared
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