Abstract
Nanostructured $\text{Ni}_x\text{Zn}_{1-x}$ Fe2O4 ( $x$ = 1, 0.5) films, about 1.5 µm thick on Si (100) substrates, were deposited using a low-temperature ( $A_{1g}$ vibration mode in Raman spectra of both films reveals a ‘‘far-from-equilibrium’’ crystallographic inversion induced by the MAS process. Its effect on the magnetic characteristics of the films is analyzed here. Both films exhibit in-plane ( $xy$ plane) isotropy with very low room-temperature coercivities, 25 Oe for NF and 35 Oe for ZNF, which is essential for high-frequency, soft magnetic applications. The presence of interparticular dipolar interaction in both films is confirmed from temperature-dependent magnetization measurements made under different dc bias fields. The CMOS-compatible ferrite processing and superparamagnetic Ni-ferrite and NiZn-ferrite thin films presented here can meet upcoming technological needs in on-chip integrated passive devices.
Published Version
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