Abstract
In this paper, the novel cold electron emitters based on nanostructured SiC layers covering the Si(001) substrate have been proposed. Their main advantage is an extremely simple and cost-effective manufacturing process based on the standard microelectronics-grade silicon wafers with no ultra-high vacuum required and no complicated chemical deposition processes or toxic chemicals involved. It integrates within a single technological step both the SiC growth and nanostructuring the surface in the form of nanosized protrusions, which is extremely beneficial for cathode applications. A simple mathematical model predicts field emission current densities and turn-on electric fields, which would allow practical device applications. According to our estimations, emission currents in the milli-Amp range can be harvested from one square centimeter of the cathode surface with electric field close to 107 V/m. So, the nanostructured SiC can be the promising material for the cold electron emitters.
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