Abstract
In this letter, we report on nanostructured NiOx with particle size ∼85 nm as an efficient hole transport material (HTM) for low temperature processed inverted planar perovskite solar cell (PSC) with power conversion efficiency of 15.64%. The homogenous NiOx HTM layer facilitated the growth of high quality CH3NH3PbI3 absorber with large crystal grains and the resulting PSC showed stable photovoltaic performance under continuous illumination.
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