Abstract
To create nanostructured multilayer Co/por-Si structures based on CoSi 2 film with determined size and distribution of the nanocrystals, the interaction between the 6.5-nm Co layer and the por-Si layer surface in vacuum was used. The formation of the self-ordered system based on top layer of CoSi 2 nanocrystals, intermediated layer (130–150 nm) contained 3–11 nm Si nanocrystals, and por-Si layer (1.1; 1.2; 1.4 μm) grown on the single crystal Si was experimentally confirmed by TEM, AFM, scanning tunnelling, IR, and UV–VIS spectroscopies. The formed por-CoSi 2/por-Si structures have novel optical and electronic properties in comparison with por-Si: the IR bands of maximal absorption (648–1275 cm −1) and maximal reflectance (2000–3200 cm −1); the maximal reflectance (up to 80%) at 800–900 nm, the optical bandgap of Si nanocrystals is E g=1.2–2.6 eV, and the height of the barrier of CoSi 2/nano-Si structures is 0.7–0.95 eV.
Published Version
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