Abstract
Nanostructured metal mesh structures demonstrating excellent conductivity and high transparency are one of the promising transparent conducting electrode (TCE) alternatives for indium tin oxide (ITO). Often, these metal nanostructures are to be employed as hybrids along with a conducting filler layer to collect charge carriers from the network voids and to minimize current and voltage losses. The influence of filler layers on dictating the extent of such ohmic loss is complex. Here, we used a general numerical model to correlate the sheet resistance of the filler, lateral charge transport distance in network voids, metal mesh line width and ohmic losses in optoelectronic devices. To verify this correlation, we prepared gold or copper network electrodes with different line widths and different filler layers, and applied them as TCEs in perovskite solar cells. We show that the photovoltaic parameters scale with the hybrid metal network TCE properties and an Au-network or Cu-network with aluminum-doped zinc oxide (AZO) filler can replace ITO very well, validating our theoretical predictions. Thus, the proposed model could be employed to select an appropriate filler layer for a specific metal mesh electrode geometry and dimensions to overcome the possible ohmic losses in optoelectronic devices.
Highlights
Recent technological developments transcending the vision of the Internet of Things (IoT) have created a huge global market for “smart” devices such as smart phones, televisions, tablets, watches and many more, which is forecast to grow exponentially over the few years [1]
The consequences of designing charge collecting metal grids and associated voltage or current loss in modules have been addressed [20,23]. In spite of these studies, a more realistic picture on ohmic losses in solar cells employing the hybrid metal mesh electrodes can be obtained by combining the sheet resistance (Rsh ) of the filler layer, overall charge carrier density in the device and the distance over which the charge carriers needs to be transported (l) from the void area to the conducting metal mesh line
The consequent losses in current and voltage can be considered as ohmic losses, which could be detrimental to optoelectronic device performance, if the sheet resistance of the filler layer is very high
Summary
Recent technological developments transcending the vision of the Internet of Things (IoT) have created a huge global market for “smart” devices such as smart phones, televisions, tablets, watches and many more, which is forecast to grow exponentially over the few years [1]. This progress goes in parallel with the demand for electronic components used in smart devices and in particular, in energy conversion and storage applications. With the ever growing demand for TCEs, the scarcity of indium coupled with its cost and energy inefficient production methods and its poor durability in flexible electronic applications prompt the search for appropriate ITO alternatives [4]
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
