Nanostructured Ga doped ZnO thin films prepared by Sol-Gel spin-Coating / Filmes finos de ZnO NanoestruturadoS Ga doped preparados por sol-Gel spin-Coating

Abstract

ZnO nanostructures are used in device systems such as photodetectors, gas sensors,photoemission devices, UV-photosensors and many others in Optoelectronics.In the present work we studied nanocrystalline ZnO:Ga thin films prepared by the sol–gel dip-coating technique. Samples were characterized by Grazing Incidence X-ray Diffraction(GIXD), X-ray Reflectivity (XR) and Grazing Incidence Small-Angle X-ray Scattering(GISAXS) methods and Field Effect Scanning Electronic Microscopy (FESEM). Characterization of the samples shows that the obtained films were uniform, continuous, with a crystallite size around 12 nm, an average pores size of around 3.5nm, and a volume fraction of nanoporosity between 0.18 and 0.3. Comparison of densities between doped and undoped films is discussed.