Abstract
Strontium titanate thin films were deposited on a silicon substrate by radio-frequency magnetron sputtering. The structural and optical properties of these films were characterized by X-ray diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and spectroscopic ellipsometry, respectively. After annealing at 600–800 °C, the as-deposited films changed from amorphous to polycrystalline. It was found that an amorphous interfacial layer appeared between the SrTiO3 layer and Si substrate in each as-deposited film, which grew thicker after annealing. The optical parameters of the SrTiO3 film samples were acquired from ellipsometry spectra by fitting with a Lorentz oscillator model. Moreover, we found that the band gap energy of the samples diminished after thermal treatment.
Highlights
Strontium titanate (SrTiO3 ) has attracted much interest in many fields for its excellent properties, such as high dielectric constant, low leakage current, good dielectric tenability, and high Seebeck coefficient
When the annealing temperature reaches 600 ◦ C, the thin film became polycrystalline, which is proved by the emergence of the three characteristic peaks at (100), (110), and (200)
It shows that the onset crystallization temperature is around 600 ◦ C
Summary
Strontium titanate (SrTiO3 ) has attracted much interest in many fields for its excellent properties, such as high dielectric constant, low leakage current, good dielectric tenability, and high Seebeck coefficient. As an excellent dielectric film for Dynamic Random Access Memories (DRAMs), SrTiO3 thin film has a high dielectric constant, even when very thin (~10 nm) [2]. Access Memory (RRAM) cell fabricated using SrTiO3 thin film has a large resistance ratio, up to. 103 –104 between high and low resistance states, and shows good retention properties in a long test time [3]. SrTiO3 thin film has a 65% variation of the permittivity in the terahertz range [4]. Because of its large Seebeck coefficient, SrTiO3 thin film is an attractive thermoelectric material [5,6]
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