Abstract
In this paper, an inverted silicon (Si) nanopyramid (iSiNP) surface structure with low aspect ratio and remarkable antireflection is developed through sequential treatments of NaOH and HF/CH3COOH/HNO3 solutions to Si nanowire (SiNW)-textured Si wafers, which are prepared by traditional electroless chemical etching. The iSiNP/PEDOT:PSS hybrid solar cell is fabricated through conformally spin-coating poly(3.4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) onto the iSiNPs; it exhibits enhanced device performance owing to the improved junction and contact quality as compared to the SiNW/PEDOT:PSS counterpart. A power conversion efficiency (PCE) of 9.6% mainly contributed from an increased fill factor (FF) of 0.61 and improved open circuit voltage (Voc) of 0.53 V is delivered by the iSiNP/PEDOT:PSS solar cell. As a comparison, the SiNW/PEDOT:PSS structure delivers a 7.1% PCE with a FF of 0.45 and Voc of 0.46 V. Considering the submicro-scale characteristic dimensions, iSiNPs are expected to be applicable to highly efficient thin film Si/PEDOT:PSS hybrid solar cells.
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