Abstract
We report herein on the effects of silicon nanowire with different morphology on the device performance of n-SiNW/PEDOT:PSS hybrid solar cells. The power conversion efficiency (PCE) and external quantum efficiency (EQE) of the SiNW/PEDOT:PSS hybrid solar cells can be optimized by varying the length of the silicon nanowires. The optimal length of silicon nanowires is 0.23 μm, and the hybrid solar cell with the optimal length has the Voc of 569 mV, Jsc of 30.1 mA/cm2, and PCE of 9.3 %. We fabricated more isolated silicon nanowires with the diluted etching solution. And the Jsc of the hybrid solar cell with more isolated nanowires has a significant enhancement, from 30.1 to 33.2 mA/cm2. The remarkable EQE in the wavelength region of 300 and 600 nm was also obtained, which are in excess of 80 %. Our work provides a simple method to substantially improve the EQE of hybrid solar cell in the short wavelength region.
Highlights
Silicon is the most widely used material for solar cell production due to its abundance, nontoxicity, reliability, and mature technology
The hybrid solar cells based on silicon nanostructure and conjugate polymer poly (3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) have attracted much attention for their simple fabrication process and low cost compared to the conventional p-n Si solar cells, which require high temperature (~1000 °C) processing for ion implantation and dopant diffusion [1,2,3,4,5,6]
The photoelectric conversion efficiency (PCE) of the Si nanowire (SiNW)/PEDOT:PSS hybrid solar cells can be substantial enhanced by optimizing the morphology of the SiNW
Summary
Silicon is the most widely used material for solar cell production due to its abundance, nontoxicity, reliability, and mature technology. The hybrid solar cells based on silicon nanostructure and conjugate polymer poly (3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) have attracted much attention for their simple fabrication process and low cost compared to the conventional p-n Si solar cells, which require high temperature (~1000 °C) processing for ion implantation and dopant diffusion [1,2,3,4,5,6]. When light illuminates the surface of the solar cell, silicon absorbs solar light, and electron–hole pairs are generated and separated at the Schottky barrier of the n-Si/PEDOT:PSS heterojunction. The main challenge of it is that its photoelectric conversion efficiency (PCE) is not high enough to mass production. Over the past few years, many researches have been carried out by using silicon textures for light trapping
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